IGBT Infineon FZ1200R17HP4_B2

Module IGBT Infineon FZ1200R17HP4_B2

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 1.95 – 2.10 – 2.30 V
Turn-on energy (Eon) 260 – 330 – 390 mJ
Turn-off energy (Eoff) 320 – 400 – 470 mJ
Thermal resistance junction–case (RthJC) 0.080 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.025 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ1200R17HP4_B2
Meta description: FZ1200R17HP4_B2 Infineon IGBT module 1700 V 1200 A IHM-B with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.