IGBT Infineon FS150R12KT4

Module IGBT Infineon FS150R12KT4

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 150 A
Repetitive peak collector current (ICRM) 300 A
Collector-emitter saturation voltage (VCEsat) 1,75–2,10 V (min–max, Tvj = 25–150 °C)
Turn-on energy (Eon) 5,00–10,0 mJ (min–max, Tvj = 25–150 °C)
Turn-off energy (Eoff) 10,0–16,0 mJ (min–max, Tvj = 25–150 °C)
Thermal resistance junction–case (RthJC) 0,20 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0,083 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 150 A
Diode thermal resistance junction–case (RthJC) 0,375 K/W per diode
Diode thermal resistance case–heatsink (RthCH) 0,155 K/W per diode
Package: EconoPACK™3 module with Trench/Fieldstop IGBT4 and emitter controlled diode, integrated NTC
Title: FS150R12KT4 | IGBT Module 1200V 150A – FOIND
Meta description: FS150R12KT4 Infineon IGBT module 1200V 150A in EconoPACK™3 package with emitter controlled diode and integrated NTC. FOIND solutions for motor drives and inverters.