FF800R17KP4_B2

IGBT Power Module – FF800R17KP4_B2
Product code: FF800R17KP4_B2

Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1700 V
Nominal Collector Current (IC nom) 800 A
Maximum DC Collector Current (IC) 1200 A
Peak Collector Current (ICRM) 1600 A (tp = 1 ms)
Technology IGBT4 Trench / Fieldstop + Emitter Controlled Diode
Configuration Half-Bridge (IGBT + Freewheeling Diode)
Gate-Emitter Voltage (VGES) ±20 V