FF150R12MS4G

IGBT Power Module – FF150R12MS4G
Product code: FF150R12MS4G

Key Parameter Value
Category IGBT Power Module
Collector-Emitter Voltage (VCES) 1200 V
Nominal Collector Current (IC nom) 150 A
Peak Collector Current (ICRM) 300 A (tp limited by Tvj op)
Technology Trench / Fieldstop IGBT + Fast Freewheeling Diode
Configuration Inverter / Half-Bridge
Gate-Emitter Voltage (VGES) ±20 V
Operating Junction Temperature (Tvj op) –40 … +125 °C