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IGBT4 Base Module – IFS100B12N3E4_B31
Product code: IFS100B12N3E4_B31
Parameter Value
Category IGBT Power Module
Voltage (VCES) 1200 V
Nominal Current (IC nom) 100 A
Maximum DC Collector Current (IC) 100 A (TC = 95 °C, Tvj max = 175 °C)
Peak Collector Current (ICRM) 200 A (tp = 1 ms)
Technology Trench / Fieldstop IGBT4 + Emitter Controlled HE Diode
Configuration Inverter / 3-phase bridge (IGBT + Freewheeling Diode)
Gate–Emitter Voltage (VGES) ±20 V
Package / Outline MIPAQ™ base module
IFS100B12N3E4_B31
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