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FZ1200R12HE4P
IGBT Module – FZ1200R12HE4P
Product code: FZ1200R12HE4P
Parameter Value
Category IGBT High Power Module (IHM-B)
Voltage (VCES) 1200 V
Nominal Current (IC nom) 1200 A
Maximum DC Collector Current (IC) 1825 A
Peak Collector Current (ICRM) 2400 A (tp = 1 ms)
Technology IGBT4 – Trench / Fieldstop (HE4)
Configuration Inverter / Half-Bridge (IGBT + Emitter Controlled Diode)
Gate-Emitter Voltage (VGES) ±20 V
VCE(sat) (typ.) 2.00 V @ 25 °C / 2.10 V @ 125 °C / 2.40 V @ 150 °C
Foind S.r.l.
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