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FF1000R17IE4DP_B2
IGBT4 Module – FF1000R17IE4DP_B2
Product code: FF1000R17IE4DP_B2
Parameter Value
Category IGBT Power Module
Voltage (VCES) 1700 V
Nominal Current (IC nom) 1000 A
Maximum DC Collector Current (IC) 1000 A (TH = 55 °C, Tvj max = 175 °C)
Peak Collector Current (ICRM) 2000 A (tp = 1 ms)
Technology Trench / Fieldstop IGBT4 + Emitter Controlled Diode
Configuration Inverter / Half-Bridge (IGBT + Freewheeling Diode)
Gate–Emitter Voltage (VGES) ±20 V
Package / Outline PrimePACK™3 module
Foind S.r.l.
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