Thyristor Diode IXYS MDC650-24io7

Module Thyristor/Diode IXYS MDC650-24io7

Repetitive peak off-state voltage (VRRM / VDRM) 2400 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 2500 V / 2400 V
Average on-state current (ITAV / IFAV) 646 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 1542 A
Surge current (ITSM / IFSM) 22.1 kA / 24.5 kA
Critical rate of rise of voltage (dv/dt)₍cr₎ 1000 V/µs
Critical rate of rise of current (di/dt)₍cr₎ 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.05 K/W (single thyristor), 0.025 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.016 K/W (single thyristor), 0.008 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3000 V

Title: MDC650-24io7 | Thyristor Diode Module 2400V 646A – FOIND
Meta description: MDC650-24io7 IXYS thyristor/diode module 2400V 646A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.