Thyristor Diode IXYS MCD95-08io1B

Module Thyristor/Diode IXYS MCD95-08io1B

Repetitive peak off-state voltage (VRRM / VDRM) 800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 900 V
Average on-state current (ITAV / IFAV) 116 A
RMS forward current (ITRMS / IFRMS) 200 A
Surge current (ITSM / IFSM) 2.07 kA
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 500 A/µs
Threshold voltage (VT0 / VF0) 0.85 V
Slope resistance (rT / rF) 2.4 mΩ
Thermal resistance junction–case (RthJC) 0.22 K/W
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 125 °C

Title: MCD95-08io1B | Thyristor Diode Module 800V 116A – FOIND Meta description: MCD95-08io1B IXYS thyristor/diode module 800V 116A. FOIND solutions for industrial AC/DC conversion, motor control, and line rectification.