Thyristor Diode IXYS MCD72-18io8B

Module Thyristor/Diode IXYS MCD72-18io8B

Repetitive peak off-state voltage (VRRM / VDRM) 1800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1900 V
Average on-state current (ITAV / IFAV) 333 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 850 A
Surge current (ITSM / IFSM) 14.5 kA
Critical rate of rise of voltage (dvdtcr) 500 V/µs
Critical rate of rise of current (didtcr) 150 A/µs (repetitive), 250 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.3 K/W (single thyristor), 0.15 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.5 K/W (single thyristor), 0.25 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 4800 V

Title: MCD72-18io8B | Thyristor Diode Module 1800V 333A – FOIND Meta description: MCD72-18io8B IXYS thyristor/diode module 1800V 333A. FOIND solutions for line rectification, industrial AC/DC control, and motor drive applications.