Thyristor Diode IXYS MCD72-16io1B

Module Thyristor/Diode IXYS MCD72-16io1B

Repetitive peak off-state voltage (VRRM / VDRM) 1600 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1700 V
Average on-state current (ITAV / IFAV) 719 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 1633 A
Surge current (ITSM / IFSM) 25.2 kA
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.050 K/W (single thyristor), 0.025 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.016 K/W (single thyristor), 0.008 K/W (whole module)
Max case temperature (TC) 130 °C
Max virtual junction temperature (TVJ) 130 °C
Isolation voltage (VISOL) 4800 V

Title: MCD72-16io1B | Thyristor Diode Module 1600V 719A – FOIND Meta description: MCD72-16io1B IXYS thyristor/diode module 1600V 719A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.