Thyristor Diode IXYS MCD72-08io1B

Module Thyristor/Diode IXYS MCD72-08io1B

Repetitive peak off-state voltage (VRRM / VDRM) 800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 900 V
Average on-state current (ITAV / IFAV) 360 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 719 A
Surge current (ITSM / IFSM) 14.5 kA
Critical rate of rise of voltage (dvdtcr) 500 V/µs
Critical rate of rise of current (didtcr) 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.3 K/W (single thyristor), 0.15 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.5 K/W (single thyristor), 0.25 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3600 V

Title: MCD72-08io1B | Thyristor Diode Module 800V 360A – FOIND Meta description: MCD72-08io1B IXYS thyristor/diode module 800V 360A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.