Thyristor Diode IXYS MCD650-24io7

Module Thyristor/Diode IXYS MCD650‑24io7

Repetitive peak off‑state voltage (VRRM / VDRM) 2400 V
Non‑repetitive peak off‑state voltage (VRSM / VDSM) 2500 V
Average on‑state current (ITAV / IFAV) 646 A (TC = 85 °C)
RMS forward current (ITRMS / IFRMS) 1542 A
Surge current (ITSM / IFSM) 24.5 kA (10 ms)
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 200 A/µs (repetitive), 400 A/µs (non‑repetitive)
Thermal resistance junction–case (RthJC) 0.050 K/W
Thermal resistance case–heatsink (RthCH) 0.016 K/W
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3000 V

Title: MCD650‑24io7 | Thyristor Diode Module 2400V 646A – FOIND Meta description: MCD650‑24io7 IXYS thyristor/diode module 2400V 646A. FOIND solutions for high‑power AC/DC conversion, industrial motor control, and line rectification.