Thyristor Diode IXYS MCD56-12io8B

Module Thyristor/Diode IXYS MCD56-12io8B

Repetitive peak reverse voltage (VRRM) 1200 V
Non-repetitive peak reverse voltage (VRSM) 1300 V
Average forward current (IFAV) 60 A (TC = 85 °C, 180° sine)
RMS forward current (IFRMS) 100 A
DC forward current (IFDC) 60 A
Surge forward current (IFSM) 1.62 kA (10 ms, 50 Hz)
Surge forward current low voltage (IFSM2) —
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Threshold voltage (VF0) 0.85 V
Slope resistance (rF) 3.7 mΩ
Thermal resistance junction–case (RthJC) 0.45 K/W
Thermal resistance case–heatsink (RthCH) —
Isolation voltage (VISOL) 4800 V AC
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 125 °C

Title: MCD56-12io8B | Thyristor/Diode Module 1200V 60A – FOIND Meta description: MCD56-12io8B IXYS thyristor/diode module 1200V 60A with 4800V isolation. FOIND solutions for controlled rectifiers, AC motor softstart, DC motor control and industrial power conversion.