Thyristor Diode IXYS MCD56-08io8B

Module Thyristor/Diode IXYS MCD56-08io8B

Repetitive peak off-state voltage (VRRM / VDRM) 800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 900 V
Average on-state current (ITAV / IFAV) 60 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 200 A
Surge current (ITSM / IFSM) 8.13 kA
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 150 A/µs (repetitive)
Thermal resistance junction–case (RthJC) 0.45 K/W (single thyristor), 0.45 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.5 K/W (single thyristor), 0.25 K/W (whole module)
Max case temperature (TC) 100 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 4800 V

Title: MCD56-08io8B | Thyristor Diode Module 800V 60A – FOIND
Meta description: MCD56-08io8B IXYS thyristor/diode module 800V 60A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.