Thyristor Diode IXYS MCD552-12io2

Module Thyristor/Diode IXYS MCD552-12io2

Repetitive peak off-state voltage (VRRM / VDRM) 1200 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1300 V
Average on-state current (ITAV / IFAV) 550 A (TC = 85°C)
RMS forward current (ITRMS / IFRMS) 1300 A
Surge current (ITSM / IFSM) 15.8 kA
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.062 K/W (single thyristor), 0.031 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.02 K/W (single thyristor), 0.01 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3000 V

Title: MCD552-12io2 | Thyristor Diode Module 1200V 550A – FOIND
Meta description: MCD552-12io2 IXYS thyristor/diode module 1200V 550A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.