Thyristor Diode IXYS MCD312-12io1

Module Thyristor/Diode IXYS MCD312-12io1

Repetitive peak off-state voltage (VRRM / VDRM) 1200 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 1300 V
Average on-state current (ITAV / IFAV) 320 A
RMS forward current (ITRMS / IFRMS) 600 A
Surge current (ITSM / IFSM) 8,16 kA
Critical rate of rise of voltage (dv/dtcr) 1000 V/µs
Critical rate of rise of current (di/dtcr) 500 A/µs (non-repetitive), 100 A/µs (repetitive)
Thermal resistance junction–case (RthJC) 0,12 K/W
Thermal resistance case–heatsink (RthCH) 0,04 K/W
Max case temperature (TC) 140 °C
Max virtual junction temperature (TVJ) 140 °C
Isolation voltage (VISOL) 4800 V

Title: MCD312-12io1 | Thyristor/Diode Module 1200V 320A – IXYS
Meta description: MCD312-12io1 IXYS Thyristor/Diode module 1200V 320A. Perfect for motor control, softstarter applications, industrial power converters, and solid-state switching.