Thyristor Diode IXYS MCD162-08io1

Module Thyristor Diode IXYS MCD162-08IO1

Repetitive peak off-state voltage (VRRM / VDRM) 800 V
Average on-state current (ITAV / IFAV) 190 A
RMS forward current (ITRMS / IFRMS) 300 A
Surge current (ITSM / IFSM) 6000 A (10 ms, 50 Hz)
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 150 A/µs (repetitive) / 500 A/µs (non-repetitive)
Threshold voltage (VT0 / VF0) 0.88 V
Slope resistance (rT / rF) 1.15 mΩ
Thermal resistance junction–case (RthJC) 0.155 K/W
Thermal resistance case–heatsink (RthCH) 0.225 K/W
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 125 °C

Title: MCD162-08IO1 | Thyristor Diode Module 800V 190A – FOIND
Meta description: MCD162-08IO1 IXYS thyristor/diode module 800V 190A. FOIND solutions for rectifiers, AC/DC converters and industrial power control.