Thyristor Diode IXYS MCD250-08IO1

Module Thyristor Diode IXYS MCD250-08IO1

Repetitive peak off-state voltage (VRRM / VDRM) 800 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 900 V
Average on-state current (ITAV / IFAV) 287 A
RMS forward current (ITRMS / IFRMS) 450 A
Surge current (ITSM / IFSM) 9000 A
Critical rate of rise of voltage (dvdtcr) 1000 V/µs
Critical rate of rise of current (didtcr) 100 A/µs (repetitive) / 800 A/µs (non-repetitive)
Threshold voltage (VT0 / VF0) 0.85 V
Slope resistance (rT / rF) 0.82 mΩ
Thermal resistance junction–case (RthJC) 0.0645 K/W (per module)
Max case temperature (TC) 85 °C
Max virtual junction temperature (TVJ) 140 °C

Title: MCD250-08IO1 | Thyristor Diode Module 800V 287A – FOIND
Meta description: MCD250-08IO1 IXYS thyristor/diode module 800V 287A. FOIND solutions for rectifiers, power converters and industrial AC/DC applications.