Thyristor Diode IXYS MDC431-22io2

Module Thyristor/Diode IXYS MDC431-22io2

Repetitive peak off-state voltage (VRRM / VDRM) 2200 V
Non-repetitive peak off-state voltage (VRSM / VDSM) 2300 V / 2300 V
Average on-state current (ITAV / IFAV) 429 A (TC = 85°C), 296 A (TC = 100°C)
RMS forward current (ITRMS / IFRMS) 1020 A
Surge current (ITSM / IFSM) 10.9 kA, 12.0 kA
Critical rate of rise of voltage (dv/dt)₍cr₎ 1000 V/µs
Critical rate of rise of current (di/dt)₍cr₎ 200 A/µs (repetitive), 400 A/µs (non-repetitive)
Thermal resistance junction–case (RthJC) 0.062 K/W (single thyristor), 0.031 K/W (whole module)
Thermal resistance case–heatsink (RthCH) 0.02 K/W (single thyristor), 0.01 K/W (whole module)
Max case temperature (TC) 125 °C
Max virtual junction temperature (TVJ) 125 °C
Isolation voltage (VISOL) 3000 V

Title: MDC431-22io2 | Thyristor Diode Module 2200V 429A – FOIND
Meta description: MDC431-22io2 IXYS thyristor/diode module 2200V 429A. FOIND solutions for high-power AC/DC conversion, industrial motor control, and line rectification.