IGBT Infineon FZ900R12KE4

Module IGBT Infineon FZ900R12KE4

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector‑emitter saturation voltage (VCEsat) 2.10 – 2.60 – 2.70 V
Turn‑on energy (Eon) 50 – 75 – 85 mJ
Turn‑off energy (Eoff) 70 – 105 – 120 mJ
Thermal resistance junction–case (RthJC) 0.062 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.016 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ900R12KE4
Meta description: FZ900R12KE4 Infineon IGBT module 1200 V 900 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for motor drives, UPS systems, wind turbines and high‑power converters.