IGBT Infineon FZ600R65KE3

Module IGBT Infineon FZ600R65KE3

Collector‑emitter voltage (VCES) 650 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector‑emitter saturation voltage (VCEsat) 1.90 – 2.30 – 2.40 V
Turn‑on energy (Eon) 25 – 40 – 45 mJ
Turn‑off energy (Eoff) 30 – 50 – 55 mJ
Thermal resistance junction–case (RthJC) 0.070 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.016 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ600R65KE3
Meta description: FZ600R65KE3 Infineon IGBT module 650 V 600 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for motor drives, UPS systems, wind turbines and high‑power converters.