IGBT Infineon FZ600R17KE3_S4

Module IGBT Infineon FZ600R17KE3_S4

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 1.85 – 2.00 – 2.15 V
Turn-on energy (Eon) 110 – 140 – 170 mJ
Turn-off energy (Eoff) 130 – 160 – 190 mJ
Thermal resistance junction–case (RthJC) 0.090 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.030 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ600R17KE3_S4
Meta description: FZ600R17KE3_S4 Infineon IGBT module 1700 V 600 A IHM-B with KE3 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.