IGBT Infineon FZ400R65KE3

Module IGBT Infineon FZ400R65KE3

Collector‑emitter voltage (VCES) 650 V
Nominal collector current (ICnom) 400 A
Repetitive peak collector current (ICRM) 800 A
Collector‑emitter saturation voltage (VCEsat) 1.80 – 2.00 – 2.20 V
Turn‑on energy (Eon) 12 – 18 – 22 mJ
Turn‑off energy (Eoff) 15 – 22 – 28 mJ
Thermal resistance junction–case (RthJC) 0.070 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.015 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ400R65KE3
Meta description: FZ400R65KE3 Infineon IGBT module 650 V 400 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for motor drives, UPS systems, wind turbines, and high-power converters.