IGBT Infineon FZ2400R33HE4

Module IGBT Infineon FZ2400R33HE4

Collector‑emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 2400 A
Repetitive peak collector current (ICRM) 4800 A
Collector‑emitter saturation voltage (VCEsat) 2.60 – 2.80 – 3.00 V
Turn‑on energy (Eon) 420 – 480 – 520 mJ
Turn‑off energy (Eoff) 460 – 500 – 540 mJ
Thermal resistance junction–case (RthJC) 0.014 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.010 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ2400R33HE4
Meta description: FZ2400R33HE4 Infineon IGBT module 3300 V 2400 A with HE4 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, traction drives, and UPS systems.