IGBT Infineon FZ2400R17HE4P_B9

Module IGBT Infineon FZ2400R17HE4P_B9

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 2400 A
Repetitive peak collector current (ICRM) 4800 A
Collector-emitter saturation voltage (VCEsat) 1.95 – 2.35 – 2.90 V
Turn-on energy (Eon) 650 mJ
Turn-off energy (Eoff) 1000 mJ
Thermal resistance junction–case (RthJC) —
Thermal resistance case–heatsink (RthCH) —
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ2400R17HE4P_B9
Meta description: FZ2400R17HE4P_B9 Infineon IGBT module 1700 V 2400 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines