Infineon IGBT FZ1800R45HL4_S7

Module IGBT Infineon FZ1800R45HL4_S7
Collector-emitter voltage (VCES) 4500 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector-emitter saturation voltage (VCEsat) 2.15 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 5800 mJ (typ., Tvj = 25 °C)
Turn-off energy (Eoff) 7050 mJ (typ., Tvj = 25 °C)
Thermal resistance junction–heatsink (RthJH) 3.6 K/kW
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV RMS
Title: FZ1800R45HL4_S7 | IGBT Module 4500 V 1800 A IHM‑B (VGE = 25 V)
Meta description: FZ1800R45HL4_S7 Infineon IGBT module 4500 V 1800 A with enhanced gate drive (VGE = 25 V) version of the FZ1800R45HL4, for high‑power and HVDC applications.