IGBT Infineon FZ1800R17HP4_B29

Module IGBT Infineon FZ1800R17HP4_B29

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector-emitter saturation voltage (VCEsat) 1.95 – 2.20 – 2.40 V
Turn-on energy (Eon) 400 – 520 – 650 mJ
Turn-off energy (Eoff) 550 – 680 – 800 mJ
Thermal resistance junction–case (RthJC) 0.065 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.018 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4 kV AC 1 min
Titolo: Module IGBT Infineon FZ1800R17HP4_B29
Meta description: FZ1800R17HP4_B29 Infineon IGBT module 1700 V 1800 A IHM-B with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.