IGBT Infineon FZ1800R17HE4_B9

Module IGBT Infineon FZ1800R17HE4_B9

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector‑emitter saturation voltage (VCEsat) 2.70 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 1950 – 2600 – 2800 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, Lσ ≈ 85 nH, di/dt ≈ 4300 A/µs)
Turn‑off energy (Eoff) 1850 – 2500 – 2700 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, Lσ ≈ 85 nH, dv/dt ≈ 2100 V/µs)
Thermal resistance junction–case (RthJC) ≈ 5,5 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) ≈ 7,0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Title: FZ1800R17HE4_B9 | IGBT Module 1700 V 1800 A Trench/Fieldstop IGBT4 (HE4, B9)
Meta description: FZ1800R17HE4_B9 Infineon IGBT module 1700 V 1800 A with Trench/Fieldstop IGBT4 and emitter controlled diode technology, designed for chopper applications, medium-voltage converters, motor drives, traction drives, UPS systems, and wind turbines.