IGBT Infineon FZ1800R12HP4_B9

Module IGBT Infineon FZ1800R12HP4_B9

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector‑emitter saturation voltage (VCEsat) 2.00 – 2.15 – 2.30 V
Turn‑on energy (Eon) 150 – 200 – 240 mJ
Turn‑off energy (Eoff) 180 – 230 – 270 mJ
Thermal resistance junction–case (RthJC) 0.065 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.018 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 3 kV AC 1 min
Titolo: Module IGBT Infineon FZ1800R12HP4_B9
Meta description: FZ1800R12HP4_B9 Infineon IGBT module 1200 V 1800 A IHM‑B with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, motor drives, UPS systems, and wind turbines.