IGBT Infineon FZ1600R33HE4

Module IGBT Infineon FZ1600R33HE4

Collector-emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1600 A
Repetitive peak collector current (ICRM) 3200 A
Collector-emitter saturation voltage (VCEsat) 2.4 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 1850 mJ (typ., Tvj = 150 °C)
Turn-off energy (Eoff) 3140 mJ (typ., Tvj = 150 °C)
Thermal resistance junction–heatsink (RthJH) 14.9 K/kW
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6000 V AC
Title: FZ1600R33HE4 | IGBT Module 3300V 1600A IHM-B – Infineon
Meta description: FZ1600R33HE4 Infineon IGBT module 3300V 1600A IGBT4-E4 with Trench/Fieldstop technology and emitter controlled diode. Designed for high-power converters, motor drives, traction drives and UPS systems.