IGBT Infineon FZ1600R17HP4_B21

Module IGBT Infineon FZ1600R17HP4_B21

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1600 A
Repetitive peak collector current (ICRM) 3200 A
Collector‑emitter saturation voltage (VCEsat) 2.60 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 1600 – 2200 – 2400 mJ
Turn‑off energy (Eoff) 1500 – 2100 – 2300 mJ
Thermal resistance junction–case (RthJC) ≈ 6 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) ≈ 7,5 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Title: FZ1600R17HP4_B21 | IGBT Module 1700 V 1600 A Trench/Fieldstop IGBT4 (HP4, B21)
Meta description: FZ1600R17HP4_B21 Infineon IGBT module 1700 V 1600 A with fast Trench/Fieldstop IGBT4 and emitter controlled diode, for high‑power medium-voltage converters, motor drives, UPS systems, and wind turbines.