IGBT Infineon FZ1600R17HP4_B2

Module IGBT Infineon FZ1600R17HP4_B2

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1600 A
Repetitive peak collector current (ICRM) 3200 A
Collector‑emitter saturation voltage (VCEsat) 2.50 – 2.70 – 2.90 V
Turn‑on energy (Eon) 950 – 1350 – 1500 mJ
Turn‑off energy (Eoff) 1000 – 1450 – 1600 mJ
Thermal resistance junction–case (RthJC) 7.50 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 8.5 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1600R17HP4_B2
Meta description: FZ1600R17HP4_B2 Infineon IGBT module 1700 V 1600 A IHM‑B with HP4 Trench/Fieldstop IGBT and emitter controlled diode technology for medium-voltage converters, motor drives, UPS systems, and wind turbines.