IGBT Infineon FZ1400R33HE4

Module IGBT Infineon FZ1400R33HE4

Collector‑emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1400 A
Repetitive peak collector current (ICRM) 2800 A
Collector‑emitter saturation voltage (VCEsat) 2.30 – 2.80 – 2.90 V
Turn‑on energy (Eon) 1600 – 2500 – 2800 mJ
Turn‑off energy (Eoff) 1760 – 2320 – 2500 mJ
Thermal resistance junction–case (RthJC) 9.30 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 5.60 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6.0 kV AC 1 min
Titolo: Module IGBT Infineon FZ1400R33HE4
Meta description: FZ1400R33HE4 Infineon IGBT module 3300 V 1400 A single switch with Trench/Fieldstop IGBT4 and emitter controlled 4 diode technology for medium‑voltage converters and high‑power applications.