IGBT Infineon FZ1200R45KL3_B5

Module IGBT Infineon FZ1200R45KL3_B5
Collector-emitter voltage (VCES) 4500 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 2.50 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 4600 mJ (typ., Tvj = 25 °C)
Turn-off energy (Eoff) 4200 mJ (typ., Tvj = 25 °C)
Thermal resistance junction–heatsink (RthJH) —
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 10.4 kV AC (60 s)
Title: FZ1200R45KL3_B5 | Highly Insulated IGBT Module 4500 V 1200 A
Meta description: FZ1200R45KL3_B5 Infineon highly insulated IGBT module 4500 V 1200 A with Trench/Fieldstop IGBT3 and emitter controlled 3 diode, featuring 10.4 kV AC isolation for traction and industrial converters.