IGBT Infineon FZ1200R33HE3

Module IGBT Infineon FZ1200R33HE3

Collector‑emitter voltage (VCES) 3300 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector‑emitter saturation voltage (VCEsat) 3.95 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 1400 – 1950 – 2200 mJ
Turn‑off energy (Eoff) 1350 – 1800 – 1950 mJ
Thermal resistance junction–case (RthJC) 9,55 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 10,0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Title: FZ1200R33HE3 | IGBT Module 3300 V 1200 A Trench/Fieldstop IGBT3 (HE3)
Meta description: FZ1200R33HE3 Infineon IGBT module 3300 V 1200 A single switch with fast Trench/Fieldstop IGBT3 and emitter controlled diode technology for chopper applications, medium‑voltage converters, motor drives, traction drives, UPS systems, and wind turbines.