IGBT Infineon FZ1200R17HP4

Module IGBT Infineon FZ1200R17HP4

Collector‑emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector‑emitter saturation voltage (VCEsat) 2.70 V (typ., Tvj = 25 °C)
Turn‑on energy (Eon) 1400 – 1950 – 2200 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, Lσ ≈ 85 nH, di/dt ≈ 4300 A/µs)
Turn‑off energy (Eoff) 1350 – 1800 – 1950 mJ (Min‑Typ‑Max @ Tvj = 25 / 125 / 150 °C, Lσ ≈ 85 nH, dv/dt ≈ 2100 V/µs)
Thermal resistance junction–case (RthJC) ≈ 9,55 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) ≈ 10,0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Title: FZ1200R17HP4 | IGBT Module 1700 V 1200 A Trench/Fieldstop IGBT4 (HP4)
Meta description: FZ1200R17HP4 Infineon IGBT module 1700 V 1200 A single switch with Trench/Fieldstop IGBT4 and emitter controlled diode technology for chopper applications, medium‑voltage converters, motor drives, traction drives, UPS systems, and wind turbines.