IGBT Infineon FZ1200R12HE4P

Module IGBT Infineon FZ1200R12HE4P

Collector‑emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector‑emitter saturation voltage (VCEsat) 2.10 – 2.25 – 2.40 V
Turn‑on energy (Eon) 90 – 120 – 140 mJ
Turn‑off energy (Eoff) 100 – 130 – 150 mJ
Thermal resistance junction–case (RthJC) 0.080 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0.020 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 3 kV AC 1 min
Titolo: Module IGBT Infineon FZ1200R12HE4P
Meta description: FZ1200R12HE4P Infineon IGBT module 1200 V 1200 A IHM‑B with fast Trench/Fieldstop HE4P IGBT and emitter controlled diode technology for motor drives, UPS systems, wind turbines, and high-power converters.