IGBT Infineon FZ1200R12HE4

Module IGBT Infineon FZ1200R12HE4

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1200 A
Repetitive peak collector current (ICRM) 2400 A
Collector-emitter saturation voltage (VCEsat) 1.75 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 175 mJ (typ., Tvj = 150 °C)
Turn-off energy (Eoff) 195 mJ (typ., Tvj = 150 °C)
Thermal resistance junction–heatsink (RthJH) 25.4 K/kW (IGBT per device, with pre-applied TIM)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Title: FZ1200R12HE4 | IGBT Module 1200V 1200A – Infineon
Meta description: FZ1200R12HE4 Infineon IGBT module 1200V 1200A IGBT4-E4 with Trench/Fieldstop and emitter controlled diode technology. Designed for high-power converters, motor drives, traction drives and UPS systems.