IGBT Infineon FZ1000R45KL3_B5

Module IGBT Infineon FZ1000R45KL3_B5

Collector-emitter voltage (VCES) 4500 V
Nominal collector current (ICnom) 1000 A
Repetitive peak collector current (ICRM) 2000 A
Collector-emitter saturation voltage (VCEsat) 2.35 – 2.90 – 3.00 V
Turn-on energy (Eon) 3600 – 4500 – 5000 mJ
Turn-off energy (Eoff) 3800 – 4700 – 5200 mJ
Thermal resistance junction–case (RthJC) 8.20 K/kW per IGBT
Thermal resistance case–heatsink (RthCH) 10.0 K/kW per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 6 kV AC 1 min
Titolo: Module IGBT Infineon FZ1000R45KL3_B5
Meta description: FZ1000R45KL3_B5 Infineon IGBT module 4500 V 1000 A single switch with KL3 Trench/Fieldstop IGBT and emitter controlled diode technology for high-power converters, medium-voltage motor drives, UPS systems, and power transmission.