IGBT Infineon FS150R12PT4

Module IGBT Infineon FS150R12PT4

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 150 A
Repetitive peak collector current (ICRM) 300 A
Collector-emitter saturation voltage (VCEsat) 1,75–2,15 V (min–max, Tvj = 25–150 °C)
Turn-on energy (Eon) 7,80–15,5 mJ (min–max, Tvj = 25–150 °C)
Turn-off energy (Eoff) 8,20–14,0 mJ (min–max, Tvj = 25–150 °C)
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 150 A
Diode thermal resistance junction–case (RthJC) 0,40 K/W per diode
Diode thermal resistance case–heatsink (RthCH) 0,15 K/W per diode
Package: EconoPACK™4 module with fast
Title: FS150R12PT4 | IGBT Module 1200V 150A – FOIND
Meta description: FS150R12PT4 Infineon IGBT module 1200V 150A in EconoPACK™4 package with fast Trench/Fieldstop IGBT4, emitter controlled diode, PressFIT pins and integrated NTC. FOIND solutions for high power converters, motor drives, and UPS systems.