IGBT Infineon FS150R12N2T7_B15

Module IGBT Infineon FS150R12N2T7_B15

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 150 A
Repetitive peak collector current (ICRM) 300 A
Collector-emitter saturation voltage (VCEsat) 1,55–1,80 V (min–max, Tvj = 25–175 °C)
Turn-on energy (Eon) 20,5–29,8 mJ (min–max, Tvj = 25–175 °C)
Turn-off energy (Eoff) 9,42–19,5 mJ (min–max, Tvj = 25–175 °C)
Thermal resistance junction–case (RthJC) 0,293 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0,129 K/W per IGBT
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 150 A
Diode thermal resistance junction–case (RthJC) 0,454 K/W per diode
Diode thermal resistance case–heatsink (RthCH) 0,140 K/W per diode
Package: EconoPACK™2 IGBT module with TRENCHSTOP™ IGBT7, emitter controlled diode, integrated NTC
Title: FS150R12N2T7_B15 | IGBT Module 1200V 150A – FOIND
Meta description: FS150R12N2T7_B15 Infineon IGBT module 1200V 150A in EconoPACK™2 package with emitter controlled diode and NTC. FOIND solutions for motor drives, auxiliary inverters, and servo drives.