IGBT Infineon FS150R06KE3

IGBT Module Infineon FS150R06KE3

Collector-emitter voltage (VCES) 600 V
Nominal collector current (ICnom) 150 A
Repetitive peak collector current (ICRM) 300 A
Collector-emitter saturation voltage (VCEsat) 1,45–1,90 V (min–max, Tvj = 25–150 °C)
Turn-on energy (Eon) 0,85–1,50 mJ (min–max, Tvj = 25–150 °C)
Turn-off energy (Eoff) 4,10–5,60 mJ (min–max, Tvj = 25–150 °C)
Thermal resistance junction–case (RthJC) 0,35 K/W per IGBT
Thermal resistance case–heatsink (RthCH) 0,085 K/W per IGBT
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 600 V / 150 A
Diode thermal resistance junction–case (RthJC) 0,60 K/W per diode
Diode thermal resistance case–heatsink (RthCH) 0,15 K/W per diode
Package: FS150R06KE3 IGBT module with emitter controlled diode, integrated NTC
Title: FS150R06KE3 | IGBT Module 600V 150A – FOIND
Meta description: FS150R06KE3 Infineon IGBT module 600V 150A with emitter controlled diode and NTC. FOIND solutions for motor drives and inverters.