IGBT Infineon FF900R17ME7_B11

Module IGBT Infineon FF900R17ME7_B11

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 900 A
Repetitive peak collector current (ICRM) 1800 A
Collector-emitter saturation voltage (VCEsat) 1.85 V (typ., Tvj = 25 °C)
Turn-on energy (Eon) 138 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 245 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.046 K/W (per IGBT)
Thermal resistance case–heatsink (RthCH) 0.027 K/W (per IGBT)
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 3400 V AC
Integrated freewheeling diode 1700 V / 900 A
Integrated temperature sensor NTC 5 kΩ @ 25 °C
Package: EconoDUAL™3 IGBT module, isolated copper baseplate
Title: FF900R17ME7_B11 | IGBT Module 1700V 900A EconoDUAL™3 – FOIND
Meta description: FF900R17ME7_B11 Infineon IGBT module 1700V 900A in EconoDUAL™3 package with TRENCHSTOP™ IGBT7, integrated diode and NTC. FOIND solutions for high-power converters, medium-voltage converters, motor drives and wind turbine applications.