IGBT Infineon FF600R12ME4P

Module IGBT Infineon FF600R12ME4P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 83 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 72 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.065 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 600 A
Integrated temperature sensor NTC
Package: EconoDUAL™ 3 IGBT module, insulated copper baseplate, pre-applied thermal interface material
Title: FF600R12ME4P | IGBT Module 1200V 600A EconoDUAL 3 – FOIND
Meta description: FF600R12ME4P Infineon IGBT module 1200V 600A with integrated diode, NTC and pre-applied TIM. FOIND solutions for high power converters, motor drives, UPS and wind turbines.