IGBT Infineon FF600R12KE4_E

Module IGBT Infineon FF600R12KE4_E

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 600 A
Repetitive peak collector current (ICRM) 1200 A
Collector-emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 29.5 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 70 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.046 K/W
Thermal resistance case–heatsink (RthCH) 0.0226 K/W
Max operating junction temperature (Tvj) 150 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 600 A
Package: 62 mm C Series IGBT module, insulated copper baseplate
Title: FF600R12KE4_E | IGBT Module 1200V 600A 62mm – FOIND
Meta description: FF600R12KE4_E Infineon IGBT module 1200V 600A in 62 mm C Series package with integrated diode. FOIND solutions for high power converters, multilevel inverters, solar and UPS systems.