IGBT Infineon FF300R12KT3_E

Module IGBT Infineon FF300R12KT3_E

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 300 A
DC collector current (IC) 480 A
Repetitive peak collector current (ICRM) 600 A
Collector-emitter saturation voltage (VCEsat) 1.90 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 25 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 37 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.085 K/W
Thermal resistance case–heatsink (RthCH) 0.03 K/W
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 2500 V AC
Integrated freewheeling diode 1200 V / 300 A
Package: 62 mm IGBT module with common emitter, insulated baseplate

Title: FF300R12KT3_E | IGBT Module 1200V 300A 62mm – FOIND
Meta description: FF300R12KT3_E Infineon IGBT module 1200V 300A with common emitter and integrated diode. FOIND solutions for inverters, motor drives and industrial power conversion.