IGBT Infineon FF225R65T3E3

Module IGBT Infineon FF225R65T3E3

Collector-emitter voltage (VCES) 6500 V
Nominal collector current (ICnom) 225 A
Repetitive peak collector current (ICRM) 450 A
Collector-emitter saturation voltage (VCEsat) 3.70 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 1710 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 1170 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–case (RthJC) 0.0291 K/W
Thermal resistance case–heatsink (RthCH) 0.0213 K/W
Max operating junction temperature (Tvj) 125 °C
Isolation voltage (VISOL) 10.4 kV AC
Integrated freewheeling diode 6500 V / 225 A
Package: XHP™3 IGBT module, AlSiC insulated baseplate

Title: FF225R65T3E3 | IGBT Module 6500V 225A XHP 3 – FOIND
Meta description: FF225R65T3E3 Infineon IGBT module 6500V 225A XHP 3 with integrated diode and high insulation capability. FOIND solutions for traction drives, medium voltage converters and industrial power systems.