IGBT Infineon FF1800XTR17T2P5P

Module IGBT Infineon FF1800XTR17T2P5P

Collector-emitter voltage (VCES) 1700 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector-emitter saturation voltage (VCEsat) 2.40 V (typ., Tvj = 175 °C)
Turn-on energy (Eon) 615 mJ (typ., Tvj = 175 °C)
Turn-off energy (Eoff) 800 mJ (typ., Tvj = 175 °C)
Thermal resistance junction–heatsink (RthJH) 0.0348 K/W
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1700 V / 1800 A
Integrated temperature sensor NTC
Thermal interface material Pre-applied
Package: XHP™ 2 IGBT module, insulated copper baseplate

Title: FF1800XTR17T2P5P | IGBT Module 1700V 1800A XHP 2 – FOIND
Meta description: FF1800XTR17T2P5P Infineon IGBT module 1700V 1800A XHP 2 with integrated diode, NTC and pre-applied thermal interface material. FOIND solutions for traction drives, motor drives, wind turbines and high power converters.