IGBT Infineon FF1800R12IE5P

Module IGBT Infineon FF1800R12IE5P

Collector-emitter voltage (VCES) 1200 V
Nominal collector current (ICnom) 1800 A
Repetitive peak collector current (ICRM) 3600 A
Collector-emitter saturation voltage (VCEsat) 2.00 V (typ., Tvj = 125 °C)
Turn-on energy (Eon) 195 mJ (typ., Tvj = 125 °C)
Turn-off energy (Eoff) 260 mJ (typ., Tvj = 125 °C)
Thermal resistance junction–heatsink (RthJH) 0.027 K/W
Max operating junction temperature (Tvj) 175 °C
Isolation voltage (VISOL) 4000 V AC
Integrated freewheeling diode 1200 V / 1800 A
Integrated temperature sensor NTC
Thermal interface material Pre-applied
Package: PrimePACK™ 3+B IGBT module, insulated copper baseplate

Title: FF1800R12IE5P | IGBT Module 1200V 1800A PrimePACK 3+B – FOIND
Meta description: FF1800R12IE5P Infineon IGBT module 1200V 1800A PrimePACK 3+B with integrated diode, NTC and pre-applied thermal interface material. FOIND solutions for high power converters, UPS systems, motor drives and solar applications.